Transient voltage suppression device and electronic circuit

The present disclosure relates to a transient voltage suppression device and an electronic circuit, comprising: a single crystal semiconductor substrate doped with a first conductivity type and comprising a first opposing surface and a second opposing surface; a semiconductor region doped with a sec...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SIMONNET JEAN-MICHEL, JOUVE DAVID, FREDERIC LANOIS
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The present disclosure relates to a transient voltage suppression device and an electronic circuit, comprising: a single crystal semiconductor substrate doped with a first conductivity type and comprising a first opposing surface and a second opposing surface; a semiconductor region doped with a second conductivity type opposite to the first conductivity type and extending from the first surface into the substrate; a first conductive electrode in contact with the semiconductor region on the first side; and a second conductive electrode in contact with the substrate on the second side; a first interface forming a junction of the TVS diode between the substrate and the semiconductor region; and a second interface forming a junction of the Schottky diode between the first conductive electrode and the semiconductor region or between the substrate and the second conductive electrode. 本公开涉及瞬态电压抑制器件和电子电路,包括:单晶半导体衬底,掺杂有第一导电类型并且包括第一相对表面和第二相对表面;半导体区,掺杂有与第一导电类型相反的第二导电类型,从第一表面延伸到衬底中;第一导电电极,在第一侧上与半导体区接触;以及第二导电电极,在第二侧上与衬底接