Vertical HWCVD (High Weight Chemical Vapor Deposition) equipment carrier plate

The utility model relates to a vertical HWCVD (High Weight Chemical Vapor Deposition) equipment carrier plate, which comprises a carrier plate strip, 1-20 silicon wafers are arranged in a single row, and silicon wafer limiting structures are arranged in three directions around each silicon wafer pla...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MENG HONGCHEN, ZHOU LANG, WU XIAOYUAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:The utility model relates to a vertical HWCVD (High Weight Chemical Vapor Deposition) equipment carrier plate, which comprises a carrier plate strip, 1-20 silicon wafers are arranged in a single row, and silicon wafer limiting structures are arranged in three directions around each silicon wafer placing area on the carrier plate strip to prevent the silicon wafers from falling off when the carrier plate and the silicon wafers are vertically placed. According to the utility model, the silicon wafer is inserted into the support plate strip from one side without the silicon wafer limiting structure, the silicon wafer is positioned in the silicon wafer placing area after being completely inserted, the silicon wafer limiting structure prevents the silicon wafer from falling off, the support plate is used for preparing an amorphous silicon film required by topcon, the temperature of the silicon wafer is close to 450 DEG C at most during film coating, and the temperature of the silicon wafer is up to 100 DEG C after