Semiconductor device with saturation current self-clamping function

The utility model relates to the field of power semiconductor devices, in particular to a semiconductor device with a saturation current self-clamping function, which extracts and introduces deep-energy-level impurities, the deep-energy-level impurities are low in ionization rate or cannot be ionized when the device works normally, the influence on the threshold voltage of the device is very small, and the saturation current self-clamping function is realized. No obvious adverse effect is caused on the characteristics of the device under the normal working condition; however, due to the positive temperature coefficient characteristic of the threshold voltage at high temperature, the saturation current of the device can be suppressed, the short-circuit capability of the device is improved, and dynamic adjustment of the threshold voltage of the device in the temperature change process of the device is realized; the preparation method is compatible with the existing technological process and has practicability.