Silicon carbide crystal growth equipment

The utility model discloses silicon carbide crystal growth equipment, which comprises a crucible body, a silicon carbide crystal growth device, a silicon carbide crystal growth device and a silicon carbide crystal growth device, and the crucible body defines a raw material cavity with an open top; t...

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Bibliographische Detailangaben
Hauptverfasser:	ZHOU LAIPING, WU YAJUAN, CHEN JUNHONG, LI ZHAOYING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The utility model discloses silicon carbide crystal growth equipment, which comprises a crucible body, a silicon carbide crystal growth device, a silicon carbide crystal growth device and a silicon carbide crystal growth device, and the crucible body defines a raw material cavity with an open top; the crucible cover is arranged at the top of the crucible body, and a containing cavity used for adhering seed crystals is defined by the crucible cover; the connecting mechanism is arranged between the crucible body and the crucible cover, and the connecting mechanism is provided with a flow guide channel communicated with the raw material cavity and the containing cavity; the flow guide mechanism is arranged in the flow guide channel, the flow guide mechanism comprises a plurality of flow guide blades, the flow guide blades are arranged in the circumferential direction of the connecting mechanism at intervals, the rotating center line of each flow guide blade extends in the radial direction of the connecting mecha