Flip high-voltage light-emitting diode chip

The utility model provides an inverted high-voltage light-emitting diode chip, which comprises a substrate, an ejector pin area arranged at the central position of the substrate and a plurality of light-emitting areas arranged at intervals through grooves, and is characterized in that each light-emitting area comprises an epitaxial stack layer, the epitaxial stack layer comprises an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer, the adjacent light-emitting areas are electrically connected through connecting electrodes. The N bonding pad layer is electrically connected with the N-type semiconductor layer of one light-emitting area; the P bonding pad layer is electrically connected with the P-type semiconductor layer of the other light-emitting area, an isolation block is arranged in the ejector pin area of the substrate, the isolation block protrudes in the direction away from the substrate, the isolation block and the light-emitting areas are arranged in an isolated m