Ion implantation electrode and ion implanter

The utility model relates to the technical field of semiconductor manufacturing equipment, and aims to provide an ion implantation electrode and an ion implanter, so that ion beams conveyed by the ion implantation electrode are more concentrated and higher. The ion implantation electrode comprises a connecting plate, the upper surface of the connecting plate is provided with an annular ion beam guiding opening protruding in the direction away from the connecting plate, the annular ion beam guiding opening penetrates through the connecting plate, and an ion movement channel is formed in the inner ring of the annular ion beam guiding opening. Specifically, the ion implanter comprises any one of the ion implantation electrodes, and the ion implantation electrode is used for implanting an ion beam into a processing object. 本申请涉及本申请涉及半导体制造设备技术领域，本申请的目的在于提供一种离子注入电极及离子注入机，可以使得离子注入电极输送的离子束更集中、束流更高。其中，所述离子注入电极，包括连接板，所述连接板的上表面上设有向远离所述连接板的方向凸起的环状离子引束口，所述环状离子引束口贯穿所述连接板，所述环状离子引束口的内环形成离子运动通道。具体的，所述离子注入机，包括前述的任意一种离子注入电极，所述离