IGBT device structure

The utility model discloses an IGBT (Insulated Gate Bipolar Translator) device structure, which relates to the technical field of IGBTs and comprises a shell, a fixed frame is fixedly connected to the bottom end in the shell, a substrate is arranged above the fixed frame, three bonding pads distributed at equal intervals are fixedly connected to the upper surface of the substrate, and a semiconductor chip is fixedly connected to the middle of the upper surface of the middle bonding pad. According to the utility model, the fixed frame is arranged inside the shell, the substrate is arranged above the fixed frame, the bonding pad and the semiconductor chip are arranged above the substrate, and the bonding pad and the semiconductor chip form a basic structure of the IGBT device, so that the control function of the IGBT on a circuit can be realized; according to the IGBT device, the heat conduction plate and the heat conduction columns are arranged between the heat dissipation plate and the substrate, and the heat