Single crystal growth device
The utility model provides a single crystal growth device and relates to the technical field of silicon carbide crystal growth. The single crystal growth device comprises a container main body, a guide cylinder and a cover body, a containing space is formed in the container body to contain silicon c...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The utility model provides a single crystal growth device and relates to the technical field of silicon carbide crystal growth. The single crystal growth device comprises a container main body, a guide cylinder and a cover body, a containing space is formed in the container body to contain silicon carbide raw materials. The guide cylinder is arranged at the top in the accommodating space, and a first guide channel and a second guide channel from bottom to top are formed; the inner diameter of the first guide channel gradually decreases from bottom to top, and the inner diameter of the second guide channel gradually increases from bottom to top. The cover body is arranged at the top in the second guide channel; seed crystals are arranged on the inner side of the cover body; the diameter of the seed crystal is larger than the minimum inner diameter of the first guide channel and larger than the minimum inner diameter of the second guide channel. The single crystal growth device provided by the utility model can |
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