Structural member for crystal growth by taking silicon carbide excess ingot as returned material

The utility model discloses a structural member for crystal growth by taking a silicon carbide excess ingot as a returned material, and relates to the field of silicon carbide single crystal growth. The device comprises a seed crystal support, a crucible, an excess material ingot and a boss, the seed crystal support is provided with a plane for placing seed crystals, and the seed crystal support is fixed at the top of the crucible; the boss is arranged on the inner wall of the crucible, and the excess material ingot block is placed on the boss; and the crucible below the excess material ingot is filled with crystal growth powder. The crucible is convenient to disassemble, can be repeatedly used, better supports the excess material ingot, enables the excess material ingot to be placed more horizontally, reduces a gap between the excess material ingot and the crucible, and prevents graphitized carbon particles from being conveyed into a crystal growth interface through the gap; tantalum carbide is resistant to