Electrical connection pad structure of semiconductor device and flip chip

The utility model discloses an electrical connection pad structure of a semiconductor device and a flip chip, which are applied to flip chip packaging and comprise an electrical connection pad located on an integrated circuit; the insulating layer is located above the electrical connection pad, an opening part is formed in the portion, above the electrical connection pad, of the insulating layer, the opening part comprises at least two strip-shaped openings and at least one block-shaped opening, and the overlapping position of any two strip-shaped openings is completely covered by the corresponding block-shaped opening; and the gold bump is positioned above the insulating layer and is connected to the electric connection pad through the opening part, and the gold bump comprises a metal seed layer and an electroplating bump formed above the metal seed layer. 本实用新型公开一种半导体装置的电性连接垫结构及覆晶芯片，应用于覆晶封装，包括：电性连接垫，位于集成电路上；绝缘层，位于所述电性连接垫上方，其中，所述绝缘层在所述电性连接垫上方形成一开口部，所述开口部包含至少两个条状开口及至少一个块状开口，任意两个所述条状开口的重叠处被对应的所述块状开口完全覆盖；以及金凸块，