High-voltage-resistant aluminum-based copper-clad plate

The utility model relates to the technical field of copper-clad plates, in particular to a high-voltage-resistant aluminum-based copper-clad plate which comprises a substrate, the substrate comprises an aluminum plate layer, an insulating layer and a copper foil layer, the aluminum plate layer is located in the middle of the substrate, the insulating layer is composed of a semiconductor film, the semiconductor film internally comprises an N area and a P area, and a PN junction which is in one-way conduction is formed between the N area and the P area. The N region of the semiconductor film is attached to the copper foil layer, and the P region of the semiconductor film is attached to the aluminum plate layer, so that the copper foil layer is electrified to form a reverse PN junction with the interior of the semiconductor film, the insulating and voltage-resisting effects between the aluminum plate layer and the copper foil layer are improved, the aluminum-based copper-clad plate effectively conducts and conne