IGBT (Insulated Gate Bipolar Translator) driving control circuit

The utility model discloses an IGBT drive control circuit comprising a PWM transmission circuit unit, an isolation drive chip, an IGBT drive circuit unit and an anti-reverse impulse voltage circuit unit. The PWM transmission circuit unit, the isolation driving chip, the IGBT driving circuit unit and...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TIAN KE, SUO JING, YAN BO, WANG YIMING, ZHOU WANGPAN, WU PENGCHUAN, LYU TIEJIANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:The utility model discloses an IGBT drive control circuit comprising a PWM transmission circuit unit, an isolation drive chip, an IGBT drive circuit unit and an anti-reverse impulse voltage circuit unit. The PWM transmission circuit unit, the isolation driving chip, the IGBT driving circuit unit and the anti-reverse impulse voltage circuit unit are electrically connected in sequence; according to the IGBT drive control circuit, the piezoresistor and the discharge tube are connected in series and then play a role of a switch, and when no transient overvoltage effect exists, the degradation of the performance of the piezoresistor can be effectively slowed down, and electrical elements in the IGBT drive circuit unit are prevented from being damaged, so that the reliability of the IGBT drive control circuit is improved. 本实用新型公开了一种IGBT驱动控制电路,包括PWM传输电路单元、隔离驱动芯片、IGBT驱动电路单元以及防反冲击电压电路单元;所述PWM传输电路单元、隔离驱动芯片、IGBT驱动电路单元以及防反冲击电压电路单元依次电性连接;通过将压敏电阻与放电管串联之后起到开关的作用,当没有暂态过电压作用时,能够有效的减缓压敏电阻性能的衰退,避免损坏IGBT驱动电路单元中的电气元件,从而提高IGBT驱动控制