Graphite cover for growing silicon carbide single crystal by PVT method
The utility model relates to the field of silicon carbide single crystal growth thermal field devices, and particularly discloses a graphite cover for growing silicon carbide single crystals by a PVT method, which comprises a seed crystal support and a flow guide component, the flow guide component...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | YIN YUNCHUAN SHA ZHIYONG YANG HAIPING LIU DEWEI HUANG SIJIANG YIN GUI WANG MEICHUN PU SHIKUN LI BAOXUE |
| description | The utility model relates to the field of silicon carbide single crystal growth thermal field devices, and particularly discloses a graphite cover for growing silicon carbide single crystals by a PVT method, which comprises a seed crystal support and a flow guide component, the flow guide component is connected with the seed crystal support through threads or buckles, the graphite cover comprises a cylindrical diameter expanding ring and a flow guide ring, a certain distance is reserved between the diameter expanding ring and the flow guide ring, and the flow guide ring is connected with the seed crystal support through threads or buckles. And a circulating chamber is defined by the seed crystal support and is provided with a flow guide inclined plane. By adopting the technical scheme, the graphite cover is connected with the graphite crucible to form a closed or semi-closed space for crystal growth; the flow guide inclined plane is arranged to guide the flow direction of the silicon carbide powder atmosphere |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN217677908UU</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN217677908UU</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN217677908UU3</originalsourceid><addsrcrecordid>eNrjZHB3L0osyMgsSVVIzi9LLVJIyy9SSC_KL8_MS1cozszJTM7PU0hOLErKTEkF8vPSc4AKiyqLSxJzFJIqFQLCQhRyU0sy8lN4GFjTEnOKU3mhNDeDkptriLOHbmpBfnxqcUFicmpeakm8s5-RobmZubmlgUVoqDFRigC9njSM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Graphite cover for growing silicon carbide single crystal by PVT method</title><source>esp@cenet</source><creator>YIN YUNCHUAN ; SHA ZHIYONG ; YANG HAIPING ; LIU DEWEI ; HUANG SIJIANG ; YIN GUI ; WANG MEICHUN ; PU SHIKUN ; LI BAOXUE</creator><creatorcontrib>YIN YUNCHUAN ; SHA ZHIYONG ; YANG HAIPING ; LIU DEWEI ; HUANG SIJIANG ; YIN GUI ; WANG MEICHUN ; PU SHIKUN ; LI BAOXUE</creatorcontrib><description>The utility model relates to the field of silicon carbide single crystal growth thermal field devices, and particularly discloses a graphite cover for growing silicon carbide single crystals by a PVT method, which comprises a seed crystal support and a flow guide component, the flow guide component is connected with the seed crystal support through threads or buckles, the graphite cover comprises a cylindrical diameter expanding ring and a flow guide ring, a certain distance is reserved between the diameter expanding ring and the flow guide ring, and the flow guide ring is connected with the seed crystal support through threads or buckles. And a circulating chamber is defined by the seed crystal support and is provided with a flow guide inclined plane. By adopting the technical scheme, the graphite cover is connected with the graphite crucible to form a closed or semi-closed space for crystal growth; the flow guide inclined plane is arranged to guide the flow direction of the silicon carbide powder atmosphere</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221028&DB=EPODOC&CC=CN&NR=217677908U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221028&DB=EPODOC&CC=CN&NR=217677908U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YIN YUNCHUAN</creatorcontrib><creatorcontrib>SHA ZHIYONG</creatorcontrib><creatorcontrib>YANG HAIPING</creatorcontrib><creatorcontrib>LIU DEWEI</creatorcontrib><creatorcontrib>HUANG SIJIANG</creatorcontrib><creatorcontrib>YIN GUI</creatorcontrib><creatorcontrib>WANG MEICHUN</creatorcontrib><creatorcontrib>PU SHIKUN</creatorcontrib><creatorcontrib>LI BAOXUE</creatorcontrib><title>Graphite cover for growing silicon carbide single crystal by PVT method</title><description>The utility model relates to the field of silicon carbide single crystal growth thermal field devices, and particularly discloses a graphite cover for growing silicon carbide single crystals by a PVT method, which comprises a seed crystal support and a flow guide component, the flow guide component is connected with the seed crystal support through threads or buckles, the graphite cover comprises a cylindrical diameter expanding ring and a flow guide ring, a certain distance is reserved between the diameter expanding ring and the flow guide ring, and the flow guide ring is connected with the seed crystal support through threads or buckles. And a circulating chamber is defined by the seed crystal support and is provided with a flow guide inclined plane. By adopting the technical scheme, the graphite cover is connected with the graphite crucible to form a closed or semi-closed space for crystal growth; the flow guide inclined plane is arranged to guide the flow direction of the silicon carbide powder atmosphere</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB3L0osyMgsSVVIzi9LLVJIyy9SSC_KL8_MS1cozszJTM7PU0hOLErKTEkF8vPSc4AKiyqLSxJzFJIqFQLCQhRyU0sy8lN4GFjTEnOKU3mhNDeDkptriLOHbmpBfnxqcUFicmpeakm8s5-RobmZubmlgUVoqDFRigC9njSM</recordid><startdate>20221028</startdate><enddate>20221028</enddate><creator>YIN YUNCHUAN</creator><creator>SHA ZHIYONG</creator><creator>YANG HAIPING</creator><creator>LIU DEWEI</creator><creator>HUANG SIJIANG</creator><creator>YIN GUI</creator><creator>WANG MEICHUN</creator><creator>PU SHIKUN</creator><creator>LI BAOXUE</creator><scope>EVB</scope></search><sort><creationdate>20221028</creationdate><title>Graphite cover for growing silicon carbide single crystal by PVT method</title><author>YIN YUNCHUAN ; SHA ZHIYONG ; YANG HAIPING ; LIU DEWEI ; HUANG SIJIANG ; YIN GUI ; WANG MEICHUN ; PU SHIKUN ; LI BAOXUE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN217677908UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>YIN YUNCHUAN</creatorcontrib><creatorcontrib>SHA ZHIYONG</creatorcontrib><creatorcontrib>YANG HAIPING</creatorcontrib><creatorcontrib>LIU DEWEI</creatorcontrib><creatorcontrib>HUANG SIJIANG</creatorcontrib><creatorcontrib>YIN GUI</creatorcontrib><creatorcontrib>WANG MEICHUN</creatorcontrib><creatorcontrib>PU SHIKUN</creatorcontrib><creatorcontrib>LI BAOXUE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YIN YUNCHUAN</au><au>SHA ZHIYONG</au><au>YANG HAIPING</au><au>LIU DEWEI</au><au>HUANG SIJIANG</au><au>YIN GUI</au><au>WANG MEICHUN</au><au>PU SHIKUN</au><au>LI BAOXUE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Graphite cover for growing silicon carbide single crystal by PVT method</title><date>2022-10-28</date><risdate>2022</risdate><abstract>The utility model relates to the field of silicon carbide single crystal growth thermal field devices, and particularly discloses a graphite cover for growing silicon carbide single crystals by a PVT method, which comprises a seed crystal support and a flow guide component, the flow guide component is connected with the seed crystal support through threads or buckles, the graphite cover comprises a cylindrical diameter expanding ring and a flow guide ring, a certain distance is reserved between the diameter expanding ring and the flow guide ring, and the flow guide ring is connected with the seed crystal support through threads or buckles. And a circulating chamber is defined by the seed crystal support and is provided with a flow guide inclined plane. By adopting the technical scheme, the graphite cover is connected with the graphite crucible to form a closed or semi-closed space for crystal growth; the flow guide inclined plane is arranged to guide the flow direction of the silicon carbide powder atmosphere</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN217677908UU |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Graphite cover for growing silicon carbide single crystal by PVT method |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T03%3A25%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YIN%20YUNCHUAN&rft.date=2022-10-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN217677908UU%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |