Graphite cover for growing silicon carbide single crystal by PVT method

The utility model relates to the field of silicon carbide single crystal growth thermal field devices, and particularly discloses a graphite cover for growing silicon carbide single crystals by a PVT method, which comprises a seed crystal support and a flow guide component, the flow guide component is connected with the seed crystal support through threads or buckles, the graphite cover comprises a cylindrical diameter expanding ring and a flow guide ring, a certain distance is reserved between the diameter expanding ring and the flow guide ring, and the flow guide ring is connected with the seed crystal support through threads or buckles. And a circulating chamber is defined by the seed crystal support and is provided with a flow guide inclined plane. By adopting the technical scheme, the graphite cover is connected with the graphite crucible to form a closed or semi-closed space for crystal growth; the flow guide inclined plane is arranged to guide the flow direction of the silicon carbide powder atmosphere