Crystal cooling device
The utility model discloses a crystal cooling device which comprises a graphite sleeve and a water-cooled jacket with a hollow interlayer which are coaxially arranged from inside to outside, an axial through hole for a crystal pulling rod to penetrate through is formed in the center of the graphite...
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| creator | ZHONG YOUSHENG WANG JUNREN SHI BIN WU HONGMING |
| description | The utility model discloses a crystal cooling device which comprises a graphite sleeve and a water-cooled jacket with a hollow interlayer which are coaxially arranged from inside to outside, an axial through hole for a crystal pulling rod to penetrate through is formed in the center of the graphite sleeve; a graphene coating is arranged on the inner wall of the graphite sleeve; the cooling device further comprises an argon system; and the argon system downwards conveys argon for cooling along the outer wall of the water-cooled jacket. According to the invention, through a triple cooling system of graphene heat radiation, water-cooled jacket water cooling and argon cooling, the crystal bar rapidly passes through a characteristic temperature interval (1100-1070 DEG C) for growth and nucleation of void defects, and the crystal quality is effectively improved.
本实用新型公开了一种晶体冷却装置，由内至外包括同轴设置的石墨套筒、以及具有空心夹层的水冷套；所述石墨套筒的中心设有供拉晶棒穿过的轴向通孔；所述石墨套筒的内壁上设有石墨烯涂层；所述冷却装置还包括氩气系统；所述氩气系统沿所述水冷套的外壁向下输送用于冷却的氩气。本申请通过石墨烯热量辐射、水冷套水冷冷却、氩气冷却三重 |
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本实用新型公开了一种晶体冷却装置，由内至外包括同轴设置的石墨套筒、以及具有空心夹层的水冷套；所述石墨套筒的中心设有供拉晶棒穿过的轴向通孔；所述石墨套筒的内壁上设有石墨烯涂层；所述冷却装置还包括氩气系统；所述氩气系统沿所述水冷套的外壁向下输送用于冷却的氩气。本申请通过石墨烯热量辐射、水冷套水冷冷却、氩气冷却三重</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221021&DB=EPODOC&CC=CN&NR=217628720U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221021&DB=EPODOC&CC=CN&NR=217628720U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHONG YOUSHENG</creatorcontrib><creatorcontrib>WANG JUNREN</creatorcontrib><creatorcontrib>SHI BIN</creatorcontrib><creatorcontrib>WU HONGMING</creatorcontrib><title>Crystal cooling device</title><description>The utility model discloses a crystal cooling device which comprises a graphite sleeve and a water-cooled jacket with a hollow interlayer which are coaxially arranged from inside to outside, an axial through hole for a crystal pulling rod to penetrate through is formed in the center of the graphite sleeve; a graphene coating is arranged on the inner wall of the graphite sleeve; the cooling device further comprises an argon system; and the argon system downwards conveys argon for cooling along the outer wall of the water-cooled jacket. According to the invention, through a triple cooling system of graphene heat radiation, water-cooled jacket water cooling and argon cooling, the crystal bar rapidly passes through a characteristic temperature interval (1100-1070 DEG C) for growth and nucleation of void defects, and the crystal quality is effectively improved.
本实用新型公开了一种晶体冷却装置，由内至外包括同轴设置的石墨套筒、以及具有空心夹层的水冷套；所述石墨套筒的中心设有供拉晶棒穿过的轴向通孔；所述石墨套筒的内壁上设有石墨烯涂层；所述冷却装置还包括氩气系统；所述氩气系统沿所述水冷套的外壁向下输送用于冷却的氩气。本申请通过石墨烯热量辐射、水冷套水冷冷却、氩气冷却三重</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBBzLqosLknMUUjOz8_JzEtXSEkty0xO5WFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8c5-RobmZkYW5kYGoaHGRCkCAOhmIlQ</recordid><startdate>20221021</startdate><enddate>20221021</enddate><creator>ZHONG YOUSHENG</creator><creator>WANG JUNREN</creator><creator>SHI BIN</creator><creator>WU HONGMING</creator><scope>EVB</scope></search><sort><creationdate>20221021</creationdate><title>Crystal cooling device</title><author>ZHONG YOUSHENG ; WANG JUNREN ; SHI BIN ; WU HONGMING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN217628720UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHONG YOUSHENG</creatorcontrib><creatorcontrib>WANG JUNREN</creatorcontrib><creatorcontrib>SHI BIN</creatorcontrib><creatorcontrib>WU HONGMING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHONG YOUSHENG</au><au>WANG JUNREN</au><au>SHI BIN</au><au>WU HONGMING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Crystal cooling device</title><date>2022-10-21</date><risdate>2022</risdate><abstract>The utility model discloses a crystal cooling device which comprises a graphite sleeve and a water-cooled jacket with a hollow interlayer which are coaxially arranged from inside to outside, an axial through hole for a crystal pulling rod to penetrate through is formed in the center of the graphite sleeve; a graphene coating is arranged on the inner wall of the graphite sleeve; the cooling device further comprises an argon system; and the argon system downwards conveys argon for cooling along the outer wall of the water-cooled jacket. According to the invention, through a triple cooling system of graphene heat radiation, water-cooled jacket water cooling and argon cooling, the crystal bar rapidly passes through a characteristic temperature interval (1100-1070 DEG C) for growth and nucleation of void defects, and the crystal quality is effectively improved.
本实用新型公开了一种晶体冷却装置，由内至外包括同轴设置的石墨套筒、以及具有空心夹层的水冷套；所述石墨套筒的中心设有供拉晶棒穿过的轴向通孔；所述石墨套筒的内壁上设有石墨烯涂层；所述冷却装置还包括氩气系统；所述氩气系统沿所述水冷套的外壁向下输送用于冷却的氩气。本申请通过石墨烯热量辐射、水冷套水冷冷却、氩气冷却三重</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Crystal cooling device |
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