Sensor

The embodiment of the utility model relates to a sensor. The sensor includes: a semiconductor substrate; a matrix of photosensitive points in the semiconductor substrate, each photosensitive point defined by an isolation trench comprising polysilicon; and a peripheral region of the semiconductor substrate extending directly around the matrix of photosensitive dots, the peripheral region including dummy photosensitive dots defined by isolation trenches including polysilicon. The density of the polycrystalline silicon in the peripheral region is between the density of the polycrystalline silicon at the edge of the photosensitive point matrix and the density of the polycrystalline silicon surrounding the peripheral region. 本公开的实施例涉及传感器。传感器包括：半导体衬底；半导体衬底中的感光点的矩阵，每个感光点由包括多晶硅的隔离沟槽界定；以及半导体衬底的外围区，直接围绕感光点矩阵延伸，外围区包括由包含多晶硅的隔离沟槽界定的虚设感光点。外围区中多晶硅的密度介于在感光点矩阵边缘处的多晶硅密度与围绕外围区的多晶硅密度之间。