Silicon-based indium-arsenic quantum dot structure

The utility model relates to the technical field of photoelectricity, in particular to a silicon-based indium arsenic quantum dot structure. The silicon-based indium-arsenic quantum dot structure comprises a silicon substrate, a lattice buffer layer and a silicon-based indium-arsenic quantum dot fun...

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Bibliographische Detailangaben
Hauptverfasser: YU CHAOHUANG, HAN FUHAI, LI LIN, LIANG BINGYIN, SUI JUN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The utility model relates to the technical field of photoelectricity, in particular to a silicon-based indium arsenic quantum dot structure. The silicon-based indium-arsenic quantum dot structure comprises a silicon substrate, a lattice buffer layer and a silicon-based indium-arsenic quantum dot functional layer; a GaAs layer, a non-doped In < 0.15 > Ga < 0.85 > As tension balance layer, a non-doped GaAs layer, a 5-15 nm In < 0.15 > Ga < 0.85 > As/5-15 nm GaAs layer which is not doped for 5-10 cycles, and an N-type doped GaAs layer are sequentially grown on the silicon substrate; and an n-type GaAs layer, an n-type Al < 0.4 > Ga < 0.6 > As, an InAs QD layer, a p-type Al < 0.4 > Ga < 0.6 > As layer and a p-type GaAs layer are sequentially grown on the lattice buffer layer. The silicon-based indium-arsenic quantum dot structure can be used for manufacturing a quantum dot laser and can also be used for manufacturing an avalanche photodiode, and a laser and a detector can be conveniently integrated on a Si wafer