Semiconductor device

The utility model discloses a semiconductor device. The semiconductor device comprises a substrate, a plurality of bit lines, a plurality of contacts, a plurality of gap wall structures and a metal silicide layer. The bit lines are arranged on the substrate, the contacts are arranged on the substrate, the contacts and the bit lines are alternately and separately arranged, each contact comprises a first semiconductor layer and a second semiconductor layer which are sequentially stacked, and each second semiconductor layer comprises undoped silicon. The spacer structures are disposed on the substrate and located between the bit lines and the contacts. The metal silicide layer is arranged on the second semiconductor layer of each contact. Therefore, the structural stability of the storage node plug can be improved, and the device efficiency of the semiconductor device is further optimized. 本实用新型公开了半导体装置，半导体装置包括衬底、多条位线、多个触点、多个间隙壁结构以及金属硅化物层。位线设置于衬底上，触点设置于衬底上并与位线交替且分隔地设置，其中，触点包括依序堆叠的第一半导体层以及第二半导体层，其中，第二半导体层包含未掺杂硅。间