High-power semiconductor device packaging structure

The utility model discloses a high-power semiconductor device packaging structure, one end of which is located at the other end of a right pin at the outer side of an epoxy packaging body, extends into the epoxy packaging body and is connected with a connecting sheet, and one end of which is located at the other end of a left pin at the outer side of the epoxy packaging body, extends into the epoxy packaging body and is connected with a chip substrate. The chip substrate further comprises a main body part horizontally arranged under the chip and a bending part which is located at one end of the main body part and extends downwards, the lower end of the bending part is connected with the left pin, the edge of one end of the chip covers the position above the connecting position of the bending part and the left pin, and the edges of the two opposite sides of the chip substrate are each provided with a notch groove. The notch groove extends to the position under the chip on the bottom layer. According to the uti