Split gate MOS device
The utility model relates to the technical field of semiconductors, and discloses a split gate MOS device which comprises a substrate, a first epitaxial layer, a second epitaxial layer and a third epitaxial layer of a first conductive type are sequentially arranged on the substrate from bottom to to...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The utility model relates to the technical field of semiconductors, and discloses a split gate MOS device which comprises a substrate, a first epitaxial layer, a second epitaxial layer and a third epitaxial layer of a first conductive type are sequentially arranged on the substrate from bottom to top, the doping concentration of the second epitaxial layer is larger than that of the first epitaxial layer, and the doping concentration of the third epitaxial layer is larger than that of the third epitaxial layer. The doping concentration of the first epitaxial layer is larger than that of the second epitaxial layer, the doping concentration of the second epitaxial layer is larger than that of the third epitaxial layer, and the first epitaxial layer, the second epitaxial layer and the third epitaxial layer form a drift region of the split-gate MOS device. The first aspect is that the second epitaxial layer with high doping concentration can enhance the electric field modulation effect of the drift region and incr |
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