SEMICONDUCTOR MEMORY DEVICE

The utility model discloses a semiconductor storage device. The semiconductor memory device includes a substrate, a plurality of bit line contacts, a plurality of bit lines, a contact plug, a first spacer, and a second spacer. The substrate comprises a plurality of active regions; the plurality of bit line contact parts are respectively positioned on the active region; the plurality of bit lines are positioned on the substrate and extend along a preset direction, and the plurality of bit lines cover the plurality of bit line contact parts on the extension paths of the bit lines; the contact plugs are located between the adjacent bit lines; the first gap wall is positioned between the contact plug and each bit line, and covers the side wall of each bit line contact part and the side wall of each bit line; the second gap wall is located between the contact plug and the first gap wall. 本实用新型公开了一种半导体存储装置。半导体存储装置包括衬底、多个位线接触部、多条位线、接触插塞、第一间隙壁、第二间隙壁。衬底包含多个有源区；各多条位线接触部分别位于有源区上；各多条位线位于所述衬底上并沿着预定方向延伸，并且各多条位线覆盖位在其延伸路径上的各