Light-emitting diode chip, light-emitting module and light-emitting or display device

The utility model provides a light emitting diode chip which at least comprises an epitaxial structure, a current blocking layer and a current expansion layer. The epitaxial structure includes a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked in sequence. The current blocking layer is formed on the second conductive type semiconductor layer. And the current expansion layer at least comprises a first sub-current expansion layer and a second sub-current expansion layer which are stacked on the current blocking layer in sequence. The first sub-current expansion layer is formed on the current blocking layer and at least covers the upper surface and the side wall area of the current blocking layer and a part of the upper surface of the second conductive type semiconductor layer. The second sub-current expansion layer is formed on the first sub-current expansion layer and at least covers the upper surface and the side wall area of the first