Epitaxial structure of light emitting diode and LED chip

The utility model provides an epitaxial structure of a light emitting diode and an LED chip, a substrate is arranged to be a patterned substrate with a plurality of protrusions on the surface, and the surfaces of the protrusions are provided with reflecting layers; and the reflection light emitting rate of the substrate can be increased, so that the light emitting brightness of the LED chip is further improved. Furthermore, the unintentional doping layer covers the protrusions and the reflecting layer, and the coverage area of the reflecting layer on the surfaces of the protrusions ranges from 5% to 95%, including endpoint values; while the reflection light emitting rate of the substrate is improved, effective connection among the unintentional doping layer, the reflection layer and the patterned substrate can be realized, and the structural stability is ensured, so that the lattice mismatch between the substrate and the epitaxial structure is reduced, the adverse effect of a pattern inclined plane on epitaxi