Resistive random access memory with planar cross array structure

The utility model discloses a resistive random access memory with a planar cross array structure, which is characterized in that a bottom electrode is arranged on the inner bottom wall of a groove, a first resistance transition layer is arranged at the top end of the bottom electrode, a second resistance transition layer is arranged at the top of the first resistance transition layer, and a third resistance transition layer is arranged at the bottom of the second resistance transition layer. The top electrode is located at the top of the second resistance transition layer. And the bottom electrode, the first resistance transition layer and the second resistance transition layer are arranged in the groove of the insulating substrate, so that the problem of fringe effect existing in a common cross array resistive random access memory is solved. Through patterning modification of the bottom electrode and by virtue of the first resistance transition layer and the second resistance transition layer, compared with