Reduction cycle hydrogen cryogenic impurity removal device for producing high-quality polycrystalline silicon
The utility model relates to a reduction cycle hydrogen cryogenic purification device for producing high-quality polycrystalline silicon. The device comprises a borane removal adsorption column, a borane-hydrogen primary gas-gas heat exchanger, a borane-hydrogen secondary gas-gas heat exchanger, a b...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The utility model relates to a reduction cycle hydrogen cryogenic purification device for producing high-quality polycrystalline silicon. The device comprises a borane removal adsorption column, a borane-hydrogen primary gas-gas heat exchanger, a borane-hydrogen secondary gas-gas heat exchanger, a borane deep freezer, a borane-hydrogen secondary gas-gas heat exchange split-phase tank, a borane deep cooling gas heat exchange split-phase tank, a borane-hydrogen chloride absorption tower and a borane-hydrogen chloride absorption tower gas inlet gas cooler, the system comprises a borane-hydrogen chloride absorption tower, a borane-hydrogen chloride absorption tower inlet gas precooler, a borane-hydrogen chloride-hydrogen desorption tower, a reduction tail gas condensate tank, an absorption tower feeding condensate tank, a reduction tail gas liquid cooler and an activated carbon adsorption tower. According to the main part of the device, a gas phase and a liquid phase separated after three-stage cooling of a mater |
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