Giant magnetoresistive element and magnetic multi-turn sensor

The utility model relates to a giant magnetoresistive element and a magnetic multi-turn sensor. A giant magnetoresistive element for a magnetic multi-turn sensor, the giant magnetoresistive element comprising: a reference layer; a non-magnetic layer adjacent to the reference layer; and a free layer...

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Bibliographische Detailangaben
Hauptverfasser: O DALAIGH CIAN PADRAIC, TAREQUZZAMAN MD, LAGE ENNO, URS ONUR NECDET, KUBIK JAN, SCHMITT JENS
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The utility model relates to a giant magnetoresistive element and a magnetic multi-turn sensor. A giant magnetoresistive element for a magnetic multi-turn sensor, the giant magnetoresistive element comprising: a reference layer; a non-magnetic layer adjacent to the reference layer; and a free layer of ferromagnetic material wherein the free layer comprises a first layer of ferromagnetic material adjacent to the non-magnetic layer and a multi-layer arrangement comprising at least a plurality of first material layers and a plurality of second material layers, the first material being ferromagnetic. 本公开涉及巨型磁阻元件和磁性多匝传感器。巨型磁阻元件用于磁性多匝传感器,该巨型磁阻元件包括:参考层;与所述参考层相邻的非磁性层;和铁磁性材料的自由层,其中该自由层包括与所述非磁性层相邻的铁磁性材料的第一层、和至少包括多个第一材料层和多个第二材料层的多层布置,所述第一材料是铁磁性的。