Deposition apparatus and deposition system

Deposition apparatuses and deposition systems are described. The deposition apparatus comprises: a vacuum chamber sized to accommodate a GEN 2-generation or higher rectangular large area substrate; and an array of deposition sources having at least a first deposition source, a second deposition source, and a third deposition source, the first, second, and third deposition sources having a target pitch in a first direction, the array of deposition sources configured to deposit a material in a processing region in the vacuum chamber in a static deposition process, wherein a ratio of the deposition source pitch to the deposition source size in the first direction is 1.8 or more. 描述了沉积设备和沉积系统。所述沉积设备包括：真空腔室，所述真空腔室定大小为适于容纳GEN 2代或更高世代的矩形大面积基板；和沉积源阵列，所述沉积源阵列具有至少第一沉积源、第二沉积源和第三沉积源，所述第一沉积源、第二沉积源和第三沉积源具有在第一方向上的靶节距，所述沉积源阵列被构造为在静态沉积工艺中在真空腔室中的处理区域中沉积材料，其中在所述第一方向上沉积源节距与沉积源尺寸的比率为1.8或更大。