Heterojunction efficient battery

The utility model provides a high-efficiency heterojunction cell, which comprises an N-type monocrystalline silicon wafer, intrinsic amorphous silicon passivation layers on a light receiving surface and a backlight surface of the N-type monocrystalline silicon wafer, and an N-type doped amorphous silicon layer and a P-type doped amorphous silicon layer which are respectively arranged on the intrinsic amorphous silicon passivation layers, the ITO transparent conductive film layers are respectively arranged on the N-type doped amorphous silicon layer and the P-type doped amorphous silicon layer; the N-type ZnO transparent conductive film layer is respectively arranged on the ITO transparent conductive film layer; and the metal grid line electrode and the metal composite electrode are respectively arranged on the N-type ZnO transparent conductive film layer. According to the high-efficiency heterojunction cell, the ITO transparent conductive film layer and the N-type zinc oxide transparent conductive film layer