Flip chip type light emitting diode device with high light extraction rate

A flip-chip light-emitting diode device with high light extraction rate comprises a flip-chip light-emitting diode grain, a wavelength conversion member and a protective layer. The flip-chip light-emitting diode crystal grain comprises a light emitting side which is removed from the epitaxial substrate and has a micron-scale to nano-scale pattern. The wavelength conversion member is filled in the micron-scale to nanometer-scale pattern, and the wavelength conversion member is selected from quantum dots or fluorescent powder with the size between micron and nanometer. The protective layer is prepared by an atomic layer deposition method, and is deposited on the wavelength conversion member to cover the micron-scale to nano-scale pattern of the light emitting side and the wavelength conversion member. According to the flip-chip light emitting diode, the epitaxial substrate is removed from the light emitting side of the flip-chip light emitting diode crystal grain, so that the heat dissipation obstruction which