Pure field effect transistor low-power-consumption over-temperature protection circuit

The utility model discloses a low-power-consumption over-temperature protection circuit of a pure field effect transistor, which comprises a biasing circuit, a temperature and voltage conversion circuit, a selection circuit, a comparator and a digital output circuit, and is characterized in that the output of the biasing circuit is connected with the input of the temperature and voltage conversion circuit; the output of the temperature voltage conversion circuit is connected with the input of the selection circuit and the input of the comparator, the output of the comparator is connected with the input of the selection circuit, and the output of the selection circuit is connected with the input of the comparator. According to the utility model, low power consumption of 340nA quiescent current is realized, hysteresis comparison of temperature is realized, the use of triodes is avoided, the use of resistors is avoided, and the use of a starting circuit is avoided. 本实用新型公开了一种纯场效应管低功耗过温保护电路，包括偏置电路、温度电压转换电路、选择电路、比