Transistor and electronic device
The utility model relates to a transistor and an electronic device. One embodiment transistor includes a semiconductor drain region defined by a first trench, and a first conductive element in the first trench that is electrically coupled to an applied node of an electrical potential that is closer...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The utility model relates to a transistor and an electronic device. One embodiment transistor includes a semiconductor drain region defined by a first trench, and a first conductive element in the first trench that is electrically coupled to an applied node of an electrical potential that is closer to a drain potential of the transistor than to a source potential of the transistor.
本公开涉及晶体管和电子设备。一个实施例晶体管包括:由第一沟槽界定的半导体漏极区域、以及在第一沟槽中的第一导电元件,该第一导电元件被电耦合到电势的施加的节点,该电势更接近晶体管的漏极电势,而不是更接近晶体管的源极电势。 |
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