Capacitor structure and semiconductor device

The utility model discloses a capacitor structure and a semiconductor device. The capacitor structure comprises a lower electrode, a capacitor dielectric structure, a first non-metal nitride layer and an upper electrode, wherein the capacitor dielectric structure, the first non-metal nitride layer and the upper electrode are sequentially formed on the lower electrode. By arranging the first non-metal nitride layer with a higher work function between the upper electrode and the capacitor dielectric structure, diffusion of current in the upper electrode to the capacitor dielectric structure can be effectively reduced, leakage current under positive bias or negative bias is inhibited, breakdown of the capacitor dielectric structure is avoided, and the performance of the device can be effectively improved. 本实用新型公开了一种电容结构以及半导体器件，该电容结构包括下电极，依次形成在下电极上的电容介电结构、第一非金属氮化物层和上电极。通过在上电极和电容介电结构之间设置具有较高功函数的第一非金属氮化物层，能够有效减少上电极中的电流向电容介电结构中扩散，抑制了正偏置或负偏置下的漏电流，避免了电容介电结构被击穿，从而能够有效提高器件性能。