Highpower semiconductor device

The utility model discloses a highpower semiconductor device which comprises a chip substrate, a first chip set and a second chip set which are wrapped by an epoxy packaging body, the first chip set and the second chip set are stacked on the chip substrate, the second chip set is located below the first chip set, and a lower electrode of the second chip set is electrically connected with the chip substrate; one end of the chip substrate extends outwards from the interior of the epoxy packaging body to serve as a first terminal, the other end, located in the epoxy packaging body, of the chip substrate is connected with an upperlayer electrode of the first chip set through a first connecting piece, and the end, away from the first chip set, of the first connecting piece is bent downwards and connected with the chip substrate; and the lower layer electrode of the second chip group is electrically connected with the chip substrate through a metal block. According to the utility model, the structural stress of the