Power semiconductor device

The utility model discloses a power semiconductor device which comprises the components of a first substrate which is provided with a first conductive surface; the first bridge arm chip is provided with a front surface, a back surface and an emitter formed on the front surface, the front surface of the first bridge arm chip is attached to the first conductive surface of the first substrate, and the emitter of the first bridge arm chip is electrically connected with the first conductive surface of the first substrate; and the second bridge arm chip is provided with a front surface, a back surface and a collector electrode formed on the back surface, the back surface of the second bridge arm chip is attached to the first conductive surface of the first substrate, and the collector electrodeof the second bridge arm chip is electrically connected with the first conductive surface of the first substrate. The half-bridge/full-bridge topological structure is applied to packaging of the powersemiconductor device with