Semiconductor discharge tube with negative resistance characteristics
The utility model provides a semiconductor discharge tube with a negative resistance characteristic. The solar cell comprises a substrate, a P2 region, an N1 region, a P1 region, a front metal electrode and a back metal electrode, wherein the P2 region is prepared on one side of the substrate by usi...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The utility model provides a semiconductor discharge tube with a negative resistance characteristic. The solar cell comprises a substrate, a P2 region, an N1 region, a P1 region, a front metal electrode and a back metal electrode, wherein the P2 region is prepared on one side of the substrate by using a doping process; the N1 region is prepared at one side of the P2 region by using a doping process; wherein the P1 region is prepared on one side of the N1 region by using a doping process; the front metal electrode is prepared on one side of the P1 region; the back metal electrode is prepared bycarrying out metal contact processing on the back surface of the thinned substrate. According to the utility model, the purposes of reducing residual voltage and improving surge capability can be achieved.
本实用新型提出了一种具有负阻特性的半导体放电管。包括:衬底、P2区、N1区、P1区、正面金属电极、背面金属电极;所述P2区制备为利用掺杂工艺在衬底一侧进行制备;所述N1区为利用掺杂工艺在P2区一侧进行制备;所述P1区为利用掺杂工艺在N1区一侧制备;正面金属电极为在P1区一侧进行制备;背面金属电极为在进行减薄处理后的衬底背面进行金属接触处理制备,本实用新型能够实现降低残压提高浪涌能力的目的。 |
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