Anti-PID battery piece based on high-temperature thermal oxidation process
The utility model discloses an anti-PID battery piece based on a high-temperature thermal oxidation process, and relates to the technical field of photovoltaic solar battery piece structures. The solar cell comprises a crystalline silicon cell sheet, an upper anti-PID high-transmittance EVA adhesive...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The utility model discloses an anti-PID battery piece based on a high-temperature thermal oxidation process, and relates to the technical field of photovoltaic solar battery piece structures. The solar cell comprises a crystalline silicon cell sheet, an upper anti-PID high-transmittance EVA adhesive film, a lower anti-PID high-transmittance EVA adhesive film, ultrathin toughened glass and a backboard. Wherein the outer surface of the crystalline silicon battery piece is wrapped with a SiO2 film, and the outer surface of the SiO2 film is wrapped with a silicon nitride film of which the upper surface and the lower surface are respectively fixed on the upper PID-resistant high-transmittance EVA adhesive film and the lower PID-resistant high-transmittance EVA adhesive film. According to the utility model, the SiO2 layer is grown before the silicon nitride film is plated; the SiO2 thin film can be used as a mask in a crystalline silicon cell process, the cell is protected from being influenced by external conditio |
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