Epitaxial structure of 940nm infrared LED

The utility model provides an epitaxial structure of a 940nm infrared LED, and belongs to the field of display equipment. The epitaxial structure sequentially comprises a substrate 1, a substrate buffer layer 2, a lower covering layer 3, a lower waveguide layer 4, a first active layer 5, a lattice buffer layer 6, a second active layer 7, an upper waveguide layer 8, a current limiting layer 9, an upper covering layer 10, a window layer 11 and an ohmic contact layer 12 from bottom to top, and the lower covering layer 3 comprises a first covering layer 3-1 and a second covering layer 3-2. According to the utility model, the lattice quality of the epitaxial structure can be improved, high-barrier electrons are provided, the mismatch effect of a well barrier is reduced, the quality of an activelayer well is improved, the light-emitting efficiency of a device is improved, the electron-hole recombination rate is improved, the light-emitting efficiency of the device is improved, the device current can be uniformly di