Optoelectronic integrated device

The utility model discloses a photoelectric integrated device, which comprises a semiconductor substrate, and at least one photoelectric device is arranged in the semiconductor substrate; a first dielectric layer covering the first surface of the semiconductor substrate; an insulating layer covering the first dielectric layer; a first opening located in the insulating layer, wherein the first opening exposes the first dielectric layer above the photoelectric device region; and the second dielectric layer covers the first dielectric layer, and the first dielectric layer and the second dielectric layer are anti-reflection layers. According to the photoelectric integrated device provided by the utility model, light can enter the photoelectric device only through the anti-reflection layer, sothat not only can excellent optical characteristics be obtained, but also the manufacturing cost is reduced. 本实用新型公开了一种光电集成器件，包括半导体基底，在所述半导体基底中至少包括一光电器件；覆盖所述半导体基底的第一表面的第一介电层；覆盖所述第一介电层的绝缘层；位于所述绝缘层中的第一开口，所述第一开口裸露所述光电器件区域上方的所述第一