Power device driving circuit and inverter circuit

The utility model relates to the technical field of semiconductors, in particular to a drive circuit and an inverter circuit of a power device. According to the utility model, the SiC diodes are connected in parallel with a small recovery current, so that the conduction loss and the recovery loss can be significantly reduced under the condition of not increasing MHz frequency band noise, and the loss and the noise of the inverter can be reduced. The utility model provides a switch circuit and an inverter circuit of a power semiconductor device, the power semiconductor device comprises a silicon IGBT and a module combined by the silicon IGBT and a SiC diode, and the resistance on a grid electrode is set to be less than the resistance under the grid electrode. 本实用新型涉及半导体技术领域，尤其是涉及一种功率器件的驱动电路和逆变电路。本实用新型具有以小的恢复电流并联SiC二极管，能够在不增加MHz频带噪声的情况下显著降低导通损耗和恢复损耗，有助于降低逆变器的损耗和噪声。本实用新型提供了一种功率半导体器件的开关电路和逆变电路，该功率半导体器件包括硅IGBT及其IGBT与SiC二极管组合的模块，其中，栅极上的电阻设置为小于栅极下的电阻。