Image sensor
The embodiment of the utility model relates to an image sensor. An image sensor includes: a semiconductor layer having a front side and a back side; a capacitive insulating wall extending from the front side of the semiconductor layer to the back side of the semiconductor layer, the capacitive insul...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The embodiment of the utility model relates to an image sensor. An image sensor includes: a semiconductor layer having a front side and a back side; a capacitive insulating wall extending from the front side of the semiconductor layer to the back side of the semiconductor layer, the capacitive insulating wall including a first insulating wall and a second insulating wall; a region of conductor orsemiconductor material extending between the first insulating wall and the second insulating wall, each of the first insulating wall and the second insulating wall having a portion protruding from theback side of the semiconductor layer and from the back side of the region of conductor or semiconductor material; and a dielectric passivation layer coating the back side of the semiconductor layer and the back side of the region of the conductor or semiconductor material, the back sides of the protruding portions of the first insulating wall and the second insulating wall being not covered by the dielectric passivation l |
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