High-voltage switching diode packaging structure

The utility model discloses a high-voltage switch diode packaging structure. The chip comprises a substrate, a first conductor layer and a second conductor layer printed on the upper surface of the substrate, a chip matrix, an electric conductor and a protective layer which are sequentially arranged...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HUANG ZHENGXIN, WANG GUOQING, CHU HONGSHEN
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:The utility model discloses a high-voltage switch diode packaging structure. The chip comprises a substrate, a first conductor layer and a second conductor layer printed on the upper surface of the substrate, a chip matrix, an electric conductor and a protective layer which are sequentially arranged from bottom to top, and further comprises a third conductor layer and a fourth conductor layer which are printed on the lower surface of the substrate, a first side conductor layer and a second side conductor layer which are arranged on the side part of the substrate, and an electrode layer, the first side conductor layer is respectively connected with the first conductor layer and the fourth conductor layer; the second side conductor layer is respectively connected with the second conductor layer and the third conductor layer; the electrode layer covers the bottom surfaces of the substrate, the first side conductor layer, the second side conductor layer, the third conductor layer and the fourth conductor layer. A