Dual-frequency environment RF energy collection circuit based on CMOS field effect transistor

The utility model discloses a dual-frequency environment RF energy collection circuit based on a CMOS field effect transistor. The circuit comprises an LC resonance matching circuit and a self-bias circuit. One end of an inductor L in the LC resonance matching circuit is connected with a positive electrode of antenna input, the other end of the inductor L is connected with a capacitor C in seriesand connected with a self-bias circuit, and the self-bias circuit comprises a PMOS transistor, an NMOS transistor, a resistor R1, a resistor R2 and a capacitor C1. The utility model relates to a dual-frequency environment RF energy collection circuit based on a CMOS field effect transistor. According to the improved Vaillard voltage doubling circuit for environmental RF energy collection, the inherent threshold voltage of a diode constructed by a CMOS is reduced in a self-bias mode; and meanwhile, the self loss is reduced, so that most of low-power environmental RF energy can be utilized in the energy collection proce