Polysilicon ingoting furnace
The utility model discloses a polysilicon ingoting furnace, including the crucible, the backplate at crucible lateral part surface is fixed in the laminating, and the laminating is fixed and is deviated from at the backplate the regional thermal -insulated felt that protects in crucible surface bott...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The utility model discloses a polysilicon ingoting furnace, including the crucible, the backplate at crucible lateral part surface is fixed in the laminating, and the laminating is fixed and is deviated from at the backplate the regional thermal -insulated felt that protects in crucible surface bottom, wherein, the thermal -insulated upper segment thickness that protects the felt is greater than hypomere thickness, and the thermal -insulated felt upper segment that protects is for corresponding to carrying out the thermal -insulated felt that protects of part that insulates against heat to silicon material in the crucible, and the thermal -insulated felt hypomere that protects is for corresponding to carry out the thermal -insulated felt that protects of part that insulates against heat toseed crystal in the crucible. The utility model discloses in through adopting the thin thick thermal -insulated felt that protects down, reduce the thermal -insulated ability of polycrystalline silicon material and strengthe |
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