Phase -change memory

The utility model provides a phase -change memory includes the L shape resistance element of first portion and second portion has, the first portion extends between the upper end of phase -change material layer and electrically conductive via hole, and the second portion is located on the upper end...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MICHEL HAOND, PAOLA ZULIANI, PIERRE MORIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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