Phase -change memory

The utility model provides a phase -change memory includes the L shape resistance element of first portion and second portion has, the first portion extends between the upper end of phase -change material layer and electrically conductive via hole, and the second portion is located on the upper end of electrically conductive via hole and can further extend the outer margin who exceedes electrically conductive via hole at least in part. The upper portion of electrically conductive via hole is centered on by the insulating material who can not be unfavorablely takes place to react with resistance element's metal material. 种相变存储器包括具有第部分和第二部分的L形电阻元件，第部分在相变材料层与导电过孔的上端部之间延伸，第二部分至少部分地位于导电过孔的上端部上并且可以进步延伸超过导电过孔的外围边缘。导电过孔的上部被不可能不利地与电阻元件的金属材料发生反应的绝缘材料围绕。