A high -pressure darlington transistor for lighting a fire ware

The utility model belongs to the technical field of semiconductor device's manufacturing, a a high -pressure darlington transistor for lighting a fire ware is related to, on the plane is overlooked tothe transistor, transistor cellular unit including back level transistor T2 with preceding stage transistor T1 in back level transistor T2's upper right portion distributes, keep apart through V typeshield groove between the two, wrap up the passivation layer around and, on the cross -section is analysed and observe to the transistor, at N be equipped with preceding stage P type base region andback level P type base region in the type second substrate sublayer, form preceding stage N+ type launch site in preceding stage P type base region, be equipped with preceding stage base metal level and connect the metal level above preceding stage P type base region, form back level N+ type launch site in the level P type base region of back, be equipped with back level base metal level and backlevel projecting pole metal