Refractive photoelectricity semiconductor device of light gradient

The utility model belongs to the technical field of the semiconductor, especially, relate to a refractive photoelectricity semiconductor device of light gradient, including support, photoelectricity semiconductor chip, an at least euphotic layer and an at least refracting layer, photoelectricity semiconductor chip fixes on the support, and the euphotic layer adopts the modified water glass of inorganic material to make through the packing and reaches the top all around at the chip to fix on the support, fixed connection is on the euphotic layer in the cover for the raw materials superposes inproper order for the low refraction silica gel of refracting layer adoption, and the euphotic layer reduces according to the gradient successive layer with refracting layer's refracting index. Utilizeeuphotic layer and the graded index that refracting layer formed, realize high light -emitting. 本实用新型属于半导体技术领域，尤其涉及种光梯度折射的光电半导体器件，包括支架、光电半导体芯片、至少透光层和至少折射层，光电半导体芯片固定在支架上，透光层采用无机材料改性水玻璃通过填充制成在芯片四周及上方，并固定在支架上；折射层采用低折射硅胶为原料依次叠加覆盖