Emitting diode with nanostructured

The utility model belongs to the semiconductor field relates to emitting diode with nanostructured, and it is through addding nanostructured at the electrode and the contact surface of epitaxial layer to nanostructured is including the high reflectivity nano wire of connecting electrode and epitaxia...

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Bibliographische Detailangaben
Hauptverfasser: ZHANG JIAHONG, MEI ZHEN, CAO YUFEI, LIANG XUANYAN, QIU ZHIZHONG, KE RONGQING
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:The utility model belongs to the semiconductor field relates to emitting diode with nanostructured, and it is through addding nanostructured at the electrode and the contact surface of epitaxial layer to nanostructured is including the high reflectivity nano wire of connecting electrode and epitaxial layer, thus the adhesion nature and the electric current expansibility of intensifier electrode and epitaxial layer, the extinction of reduction electrode. 本实用新型属于半导体领域,涉及具有纳米结构的发光二极管,其通过在电极与外延层的接触面增设纳米结构,并且纳米结构包括连接电极和外延层的高反射率纳米线,从而增强电极与外延层的粘附性和电流扩展性,减少电极的吸光。