Horizontal high -pressure bipolar junction transistor

The utility model discloses a horizontal high -pressure bipolar junction transistor, keep apart including P type substrate, N type buried layer, P type buried layer, N type epitaxial layer, P type and pierce through district, N type reach through region, P type tagma, N type and heavily mix district, N type and heavily mix ring district, oxygen layer, field oxygen layer, the preceding dielectric layer of TEOS metal, launch site metal, collecting electrode metal and base metal in advance, the utility model discloses an on the basis of the collective pipe of the horizontal bipolar junction type of conventionality, added the cyclic annular injection of N type between collecting zone and launch site, the overall arrangement of first layer metal is optimized to the rethread, and the all standing of messenger's metal is on the collecting zone, and the size surpasss the twice of collecting zone junction depth. Reach through emulation and actual flow result the utility model discloses a horizontal high -pressure bipo