Horizontal high voltage power bipolar junction transistor

The utility model discloses a horizontal high voltage power bipolar junction transistor, specifically on the basis that the horizontal power bipolar junction type collective of a conventionality managed, added the cyclic annular injection of N type between all collecting zones and launch site to and the overall arrangement through optimizing all metals of first layer, make the all standing of collecting electrode first layer metal on the collecting zone, the size surpasss the twice of collecting zone junction depth, and the projecting pole metal through the through -hole and for the second time the metal draw forth. Theoretical analysis is under the device is in reverse withstand voltage operating condition, and all collector junction edges are because the cover of metal field plate for the camber effect greatly reduced of depletion region when diffusion edge curved surface knot, withstand voltage rapid grow, and the joining of N ring can be great reduces the leakage current between device collecting electrod